A2C35S12M3-F - STMicroelectronics

Product overview

Part Number: A2C35S12M3-F

Manufacturer: STMicroelectronics

Product Category: IGBT Modules

Description: IGBT Modules PTD NEW MAT & PWR SOLUTION

Documents & Media

Datasheets: A2C35S12M3-F

Product Attributes

Collector- Emitter Voltage VCEO Max :: 1200 V

Collector-Emitter Saturation Voltage :: 1.95 V

Configuration :: Converter Inverter Brake

Continuous Collector Current at 25 C :: 35 A

Gate-Emitter Leakage Current :: 500 nA

Maximum Operating Temperature :: + 150 C

Minimum Operating Temperature :: - 40 C

Package / Case :: ACEPACK2

Packaging :: Tray

Pd - Power Dissipation :: 250 W

Product :: IGBT Silicon Modules

Description

IGBT Modules PTD NEW MAT & PWR SOLUTION

Price & Procurement

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