Product overview
- Part Number
- A2C35S12M3-F
- Manufacturer
- STMicroelectronics
- Product Category
- IGBT Modules
- Description
- IGBT Modules PTD NEW MAT & PWR SOLUTION
Documents & Media
- Datasheets
- A2C35S12M3-F
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 1.95 V
- Configuration :
- Converter Inverter Brake
- Continuous Collector Current at 25 C :
- 35 A
- Gate-Emitter Leakage Current :
- 500 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- ACEPACK2
- Packaging :
- Tray
- Pd - Power Dissipation :
- 250 W
- Product :
- IGBT Silicon Modules
Description
IGBT Modules PTD NEW MAT & PWR SOLUTION
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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