DF80R12W2H3F_B11 - Infineon Technologies

Product overview

Part Number: DF80R12W2H3F_B11

Manufacturer: Infineon Technologies

Product Category: IGBT Modules

Description: IGBT Modules LOW POWER EASY

Documents & Media

Datasheets: DF80R12W2H3F_B11

Product Attributes

Collector- Emitter Voltage VCEO Max :: 1200 V

Collector-Emitter Saturation Voltage :: 1.55 V

Configuration :: Dual

Continuous Collector Current at 25 C :: 20 A

Gate-Emitter Leakage Current :: 100 nA

Maximum Operating Temperature :: + 150 C

Minimum Operating Temperature :: - 40 C

Package / Case :: Module

Packaging :: Tray

Pd - Power Dissipation :: 20 mW

Product :: IGBT Silicon Carbide Modules

Description

IGBT Modules LOW POWER EASY

Price & Procurement

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