Product overview
- Part Number
- MIXA61H1200ED
- Manufacturer
- IXYS
- Product Category
- IGBT Modules
- Description
- IGBT Modules IGBT XPT Module H Bridge
Documents & Media
- Datasheets
- MIXA61H1200ED
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 1.8 V
- Configuration :
- Half Bridge
- Continuous Collector Current at 25 C :
- 85 A
- Gate-Emitter Leakage Current :
- 500 nA
- Maximum Operating Temperature :
- + 125 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- E2-Pack
- Packaging :
- Bulk
- Pd - Power Dissipation :
- 290 W
- Product :
- IGBT Silicon Modules
Description
IGBT Modules IGBT XPT Module H Bridge
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
