Product overview
- Part Number
- APTGT50A170T1G
- Manufacturer
- Microsemi / Microchip
- Product Category
- IGBT Modules
- Description
- IGBT Modules DOR CC8081
Documents & Media
- Datasheets
- APTGT50A170T1G
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 1.7 kV
- Collector-Emitter Saturation Voltage :
- 2 V
- Configuration :
- Dual
- Continuous Collector Current at 25 C :
- 75 A
- Gate-Emitter Leakage Current :
- 400 nA
- Maximum Operating Temperature :
- + 100 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- SP1-12
- Packaging :
- Tube
- Pd - Power Dissipation :
- 312 W
- Product :
- IGBT Silicon Modules
Description
IGBT Modules DOR CC8081
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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