APTGT35A120T1G - Microsemi / Microchip

Product overview

Part Number: APTGT35A120T1G

Manufacturer: Microsemi / Microchip

Product Category: IGBT Modules

Description: IGBT Modules Trench Field Stop 1200V 55A 208W

Documents & Media

Datasheets: APTGT35A120T1G

Product Attributes

Collector- Emitter Voltage VCEO Max :: 1.2 kV

Collector-Emitter Saturation Voltage :: 1.7 V

Configuration :: Dual

Continuous Collector Current at 25 C :: 55 A

Gate-Emitter Leakage Current :: 400 nA

Maximum Operating Temperature :: + 100 C

Minimum Operating Temperature :: - 40 C

Package / Case :: SP1-12

Packaging :: Tube

Pd - Power Dissipation :: 208 W

Product :: IGBT Silicon Modules

Description

IGBT Modules Trench Field Stop 1200V 55A 208W

Price & Procurement

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