Product overview
- Part Number
- A1P35S12M3-F
- Manufacturer
- STMicroelectronics
- Product Category
- IGBT Modules
- Description
- IGBT Modules PTD NEW MAT & PWR SOLUTION
Documents & Media
- Datasheets
- A1P35S12M3-F
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 1.95 V
- Configuration :
- 6-Pack
- Continuous Collector Current at 25 C :
- 35 A
- Gate-Emitter Leakage Current :
- 500 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- ACEPACK1
- Packaging :
- Tray
- Pd - Power Dissipation :
- 250 W
- Product :
- IGBT Silicon Modules
Description
IGBT Modules PTD NEW MAT & PWR SOLUTION
Price & Procurement
Associated Product
-
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
You May Also Be Interested In
CA3106E12S-3PZB-02
CA3106E12S-3P-B-02
DJT16E23-21SB
CA3100E14S-6P-B-14
CA3100E14S-6P-B-15
CA3100E14S-6P-B-05-15
CA02L20-29S-B
CA3100E14S-6P-B-05-14
CA06FW18-1S-B-01-F0
CA3100E14S-7S-B-14
CA3106E16S-1P-B-06
YACT24JH35HN000000
CA3102E28-22P-B
CA3102E28-16P-B-A176
DJT10E25-19SN
YDM9713-27-2PC1040
CA3101E14S-5P-B-F80
VG95234B12428SN
VG95234J110SL4SN
CA3102E28-9P-B-A176