Product overview

Part Number
BSM35GP120
Manufacturer
Infineon Technologies
Product Category
IGBT Modules
Description
IGBT Modules 1200V 35A PIM

Documents & Media

Datasheets
BSM35GP120

Product Attributes

Collector- Emitter Voltage VCEO Max :
1200 V
Collector-Emitter Saturation Voltage :
2.4 V
Configuration :
Hex
Continuous Collector Current at 25 C :
45 A
Gate-Emitter Leakage Current :
300 nA
Maximum Operating Temperature :
+ 125 C
Minimum Operating Temperature :
- 40 C
Package / Case :
EconoPIM2
Packaging :
Tray
Pd - Power Dissipation :
230 W
Product :
IGBT Silicon Modules

Description

IGBT Modules 1200V 35A PIM

Price & Procurement

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