Product overview
- Part Number
- BSM50GD120DN2E3226
- Manufacturer
- Infineon Technologies
- Product Category
- IGBT Modules
- Description
- IGBT Modules N-CH 1.2KV 50A
Documents & Media
- Datasheets
- BSM50GD120DN2E3226
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 2.5 V
- Configuration :
- Hex
- Continuous Collector Current at 25 C :
- 50 A
- Gate-Emitter Leakage Current :
- 200 nA
- Maximum Operating Temperature :
- + 150 C
- Package / Case :
- EconoPACK 2
- Packaging :
- Tray
- Pd - Power Dissipation :
- 350 W
- Product :
- IGBT Silicon Modules
Description
IGBT Modules N-CH 1.2KV 50A
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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