Product overview

Part Number
STGIPQ8C60T-HZ
Manufacturer
STMicroelectronics
Product Category
IGBT Modules
Description
IGBT Modules PTD IGBT & IPM

Documents & Media

Datasheets
STGIPQ8C60T-HZ

Product Attributes

Collector- Emitter Voltage VCEO Max :
600 V
Collector-Emitter Saturation Voltage :
2 V
Configuration :
Half Bridge
Continuous Collector Current at 25 C :
8 A
Gate-Emitter Leakage Current :
-
Maximum Operating Temperature :
+ 125 C
Minimum Operating Temperature :
- 40 C
Package / Case :
N2DIP-26
Packaging :
Tube
Pd - Power Dissipation :
19.2 W
Product :
IGBT Silicon Modules

Description

IGBT Modules PTD IGBT & IPM

Price & Procurement

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