Product overview
- Part Number
- IXXN110N65C4H1
- Manufacturer
- IXYS
- Product Category
- IGBT Modules
- Description
- IGBT Modules 650V/234A Trench IGBT GenX4 XPT
Documents & Media
- Datasheets
- IXXN110N65C4H1
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 650 V
- Collector-Emitter Saturation Voltage :
- 1.98 V
- Configuration :
- Single Dual Emitter
- Continuous Collector Current at 25 C :
- 210 A
- Gate-Emitter Leakage Current :
- 100 nA
- Maximum Operating Temperature :
- + 175 C
- Minimum Operating Temperature :
- - 55 C
- Package / Case :
- SOT-227B-4
- Packaging :
- Tube
- Pd - Power Dissipation :
- 750 W
- Product :
- IGBT Silicon Modules
Description
IGBT Modules 650V/234A Trench IGBT GenX4 XPT
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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