Product overview
- Part Number
- A2C25S12M3
- Manufacturer
- STMicroelectronics
- Product Category
- IGBT Modules
- Description
- IGBT Modules PTD NEW MAT & PWR SOLUTION
Documents & Media
- Datasheets
- A2C25S12M3
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 1200 V
- Collector-Emitter Saturation Voltage :
- 1.95 V
- Configuration :
- Converter Inverter Brake
- Continuous Collector Current at 25 C :
- 25 A
- Gate-Emitter Leakage Current :
- 500 nA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Package / Case :
- ACEPACK2
- Packaging :
- Tray
- Pd - Power Dissipation :
- 197 W
- Product :
- IGBT Silicon Modules
Description
IGBT Modules PTD NEW MAT & PWR SOLUTION
Price & Procurement
Associated Product
-
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
You May Also Be Interested In
MAX664CPA+
TPS74001DGKT
MIC29201-5.0WU
LT3065EDD#TRPBF
MIC37501-1.8WR
LP3873ES-1.8/NOPB
LP3876ES-ADJ/NOPB
ADP7156ARDZ-1.2-R7
MIC39500-2.5WT
MAX883EPA+
LP3853ES-5.0/NOPB
LT3070EUFD#TRPBF
MIC5504-1.2YMT-TR
MIC5327-2.8YMT-TR
MIC94310-MYMT-TR
AP7313-25SAG-7
TC1016-3.0VLTTR
MCP1700T-3102E/TT
AP7365-18YG-13
AZ1117CH-1.5TRG1