Product overview
- Part Number
- HBDM60V600W-7
- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT 200mW Half H-Bridge
Documents & Media
- Datasheets
- HBDM60V600W-7
Product Attributes
- Collector- Base Voltage VCBO :
- - 60 V, 80 V
- Collector- Emitter Voltage VCEO Max :
- - 60 V, 65 V
- Collector-Emitter Saturation Voltage :
- - 0.5 V
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- - 5.5 V, 6 V
- Gain Bandwidth Product fT :
- 100 MHz
- Maximum DC Collector Current :
- 0.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-363-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 200 mW
- Series :
- HBDM60
- Transistor Polarity :
- NPN, PNP
Description
Bipolar Transistors - BJT 200mW Half H-Bridge
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-