Product overview

Part Number
2N5655 TIN/LEAD
Manufacturer
Central Semiconductor
Product Category
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT NPN 275Vcbo 250Vceo 6.0Vebo 500mA 20W

Documents & Media

Datasheets
2N5655 TIN/LEAD

Product Attributes

Collector- Base Voltage VCBO :
275 V
Collector- Emitter Voltage VCEO Max :
250 V
Collector-Emitter Saturation Voltage :
1 V
Configuration :
Single
Emitter- Base Voltage VEBO :
6 V
Gain Bandwidth Product fT :
10 MHz
Maximum DC Collector Current :
1 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
Through Hole
Package / Case :
TO-126-3
Packaging :
Bulk
Pd - Power Dissipation :
20 W
Series :
2N5655
Transistor Polarity :
NPN

Description

Bipolar Transistors - BJT NPN 275Vcbo 250Vceo 6.0Vebo 500mA 20W

Price & Procurement

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