Product overview

Part Number
MJ11013 TIN/LEAD
Manufacturer
Central Semiconductor
Product Category
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT PNP 30A 200W 90Vcbo 90Vceo 20A 30A

Documents & Media

Datasheets
MJ11013 TIN/LEAD

Product Attributes

Collector- Base Voltage VCBO :
90 V
Collector- Emitter Voltage VCEO Max :
90 V
Collector-Emitter Saturation Voltage :
4 V
Configuration :
Single
Emitter- Base Voltage VEBO :
-
Gain Bandwidth Product fT :
4 MHz
Maximum DC Collector Current :
-
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
Through Hole
Package / Case :
TO-3-2
Packaging :
Tube
Pd - Power Dissipation :
200 W
Series :
MJ11013
Transistor Polarity :
PNP

Description

Bipolar Transistors - BJT PNP 30A 200W 90Vcbo 90Vceo 20A 30A

Price & Procurement

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