Product overview

Part Number
PMD10K100 TIN/LEAD
Manufacturer
Central Semiconductor
Product Category
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT NPN 100Vcbo 100Vceo 5.0Vebo 12A 150W

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Product Attributes

Collector- Base Voltage VCBO :
100 V
Collector- Emitter Voltage VCEO Max :
100 V
Collector-Emitter Saturation Voltage :
2 V
Configuration :
Single
Emitter- Base Voltage VEBO :
5 V
Gain Bandwidth Product fT :
4 MHz
Maximum DC Collector Current :
20 A
Maximum Operating Temperature :
+ 200 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
Through Hole
Package / Case :
TO-3-2
Packaging :
Tube
Pd - Power Dissipation :
150 W
Series :
PMD10K100
Transistor Polarity :
NPN

Description

Bipolar Transistors - BJT NPN 100Vcbo 100Vceo 5.0Vebo 12A 150W

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