Product overview
- Part Number
- JAN2N5339U3
- Manufacturer
- Microchip Technology
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT Power BJT
Documents & Media
- Datasheets
- JAN2N5339U3
Product Attributes
- Collector- Base Voltage VCBO :
- 100 V
- Collector- Emitter Voltage VCEO Max :
- 100 V
- Collector-Emitter Saturation Voltage :
- 1.2 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 6 V
- Maximum DC Collector Current :
- 5 A
- Maximum Operating Temperature :
- + 200 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- TO-276AA
- Packaging :
- Tray
- Pd - Power Dissipation :
- 75 W
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT Power BJT
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
RN731JTTD39R7F100
RN731JTTD18R7F50
RN731JTTD2292F100
RN731JTTD6422F25
RN731JTTD7151F50
RG3216P-6812-D-T5
RN73R1JTTD1170F50
RN731JTTD7062D100
RN731JTTD12R1F100
RN731JTTD1243F25
RN731JTTD68R1F25
RN73R1JTTD2460F25
RN731JTTD5490F100
RN731JTTD2553D100
RN73R1JTTD1780D100
RN73R1JTTD5622D50
RN73R1JTTD25R8F50
RN731JTTD1350F25
RN731JTTD4751D100
RN731JTTD93R1F25