Product overview
- Part Number
- BUJ403A/DG,127
- Manufacturer
- WeEn Semiconductors
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT NPN POWER TRANSISTOR
Documents & Media
- Datasheets
- BUJ403A/DG,127
Product Attributes
- Collector- Base Voltage VCBO :
- 1.2 kV
- Collector- Emitter Voltage VCEO Max :
- 550 V
- Collector-Emitter Saturation Voltage :
- 0.15 V
- Configuration :
- Single
- Maximum DC Collector Current :
- 6 A
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-220AB-3
- Pd - Power Dissipation :
- 100 W
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT NPN POWER TRANSISTOR
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
P091S-1FC25AR1MEG
P091S-3FB25CR10K
P091S-2FD30AR2K
P091S-1FA25DR2K
P091S-1QA20BR100K
P091S-3EC30DR10K
P091S-2FA25AR200K
P091S-2FB25CR50K
P091S-2FD25AR50K
P091S-3EC25AR1MEG
P091S-1FD30CR1MEG
P091S-3FC30AR100K
P091S-3FD30AR2K
P091S-4EC20AR1MEG
P091S-1QA25DR10K
P091S-QA25CR500K
P091S-4FD25DR5K
P091S-4FB30CR5K
P091S-4EC30CR100K
P091S-EA25AR1MEG