Product overview
- Part Number
- ZTX658QSTZ
- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT Pwr Hi Voltage Transistor
Documents & Media
- Datasheets
- ZTX658QSTZ
Product Attributes
- Collector- Base Voltage VCBO :
- 400 V
- Collector- Emitter Voltage VCEO Max :
- 400 V
- Collector-Emitter Saturation Voltage :
- 0.5 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 50 MHz
- Maximum DC Collector Current :
- 500 mA
- Maximum Operating Temperature :
- + 200 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-92-3
- Packaging :
- Ammo Pack
- Pd - Power Dissipation :
- 1 W
- Qualification :
- AEC-Q101
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT Pwr Hi Voltage Transistor
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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