Product overview
- Part Number
- BCV62AE6327HTSA1
- Manufacturer
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT AF TRANS GP BJT PNP 30V 0.1A
Documents & Media
- Datasheets
- BCV62AE6327HTSA1
Product Attributes
- Collector- Base Voltage VCBO :
- 30 V
- Collector- Emitter Voltage VCEO Max :
- 30 V
- Collector-Emitter Saturation Voltage :
- 250 mV
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 6 V
- Gain Bandwidth Product fT :
- 250 MHz
- Maximum DC Collector Current :
- 200 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-143-4
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 300 mW
- Series :
- BCV62
- Transistor Polarity :
- PNP
Description
Bipolar Transistors - BJT AF TRANS GP BJT PNP 30V 0.1A
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
62GB16J1623SC044714
62GB16J1623SB044416
62GB16J2016SN
62GB16J1623SC044416
62GB16J1623SC044771
62GB16J1623SX044714
62GB16J2016PN044
62GB14E2016PN416
62GB16J1623SX044771
62GB16J1623SF044
62GB16J1623SB044771
62GB16J2016PN044771
62GB16J1623SC044
62GB16J1623SW044771
62GB16J2016SN771
62GB16J2016SN714
62GB16J1623SX044416
62GB57T1415SN771
62GB57T1415SN714
62GB57T1415SN416