Product overview
- Part Number
- 2SD1766T100P
- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT DVR NPN 32V 2A
Documents & Media
- Datasheets
- 2SD1766T100P
Product Attributes
- Collector- Base Voltage VCBO :
- 40 V
- Collector- Emitter Voltage VCEO Max :
- 32 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 100 MHz
- Maximum DC Collector Current :
- 2 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 2000 mW
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT DVR NPN 32V 2A
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
TRE25RD150-02G13-Level-VI
TRE25RD050-48G13-Level-VI
TRE25R240-12G13-Level-VI
TRE25R120-02G12-Level-VI
TRE25RD240-02G13-Level-VI
TRE25R240-35G11-Level-VI
TRE25R120-48G13-Level-VI
TRE25RD120-02G13-Level-VI
TRE25R240-49G11-Level-VI
TRE25RD180-12G11-Level-VI
TRE25RD050-35G13-Level-VI
TRE25RD120-49G13-Level-VI
TRE25RD120-39G13-Level-VI
TRE25R240-01G12-Level-VI
TRE25R150-01G12-Level-VI
TRE25RD240-48G11-Level-VI
TRE25R120-01G13-Level-VI
TRE25R180-11G11-Level-VI
TRE25RD050-40G13-Level-VI
TRE25RD050-12G11-Level-VI
