Product overview
- Part Number
- HN4B102J(TE85L,F)
- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT 30V PWR TRANS
Documents & Media
- Datasheets
- HN4B102J(TE85L,F)
Product Attributes
- Collector- Base Voltage VCBO :
- - 30 V, 60 V
- Collector- Emitter Voltage VCEO Max :
- - 30 V, 30 V
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- - 7 V, 7 V
- Maximum DC Collector Current :
- - 8 A, 8 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-25-5
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 1.1 W
- Series :
- HN4B102
- Transistor Polarity :
- NPN, PNP
Description
Bipolar Transistors - BJT 30V PWR TRANS
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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