Product overview

Part Number
HN1A01FE-Y,LXHF
Manufacturer
Toshiba
Product Category
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-563 (ES6)

Documents & Media

Datasheets
HN1A01FE-Y,LXHF

Product Attributes

Collector- Base Voltage VCBO :
50 V
Collector- Emitter Voltage VCEO Max :
50 V
Collector-Emitter Saturation Voltage :
0.1 V
Configuration :
Dual
Emitter- Base Voltage VEBO :
5 V
Gain Bandwidth Product fT :
80 MHz
Maximum Operating Temperature :
+ 150 C
Mounting Style :
SMD/SMT
Package / Case :
ES-6
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
100 mW
Qualification :
AEC-Q200
Transistor Polarity :
PNP

Description

Bipolar Transistors - BJT AUTO AEC-Q PNP + PNP Tr VCEO:-50V Ic:-0.15A hFE:120-240 SOT-563 (ES6)

Price & Procurement

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