Product overview
- Part Number
- HN1B01FU-GR,LXHF
- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-400 SOT-363 (US6)
Documents & Media
- Datasheets
- HN1B01FU-GR,LXHF
Product Attributes
- Collector- Base Voltage VCBO :
- 60 V
- Collector- Emitter Voltage VCEO Max :
- 50 V
- Collector-Emitter Saturation Voltage :
- 0.1 V
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 120 MHz, 150 MHz
- Maximum Operating Temperature :
- + 125 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- US-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 200 mW
- Qualification :
- AEC-Q200
- Transistor Polarity :
- NPN, PNP
Description
Bipolar Transistors - BJT AUTO AEC-Q PNP + NPN Tr VCEO:-50V Ic:-0.15A hFE:120-400 SOT-363 (US6)
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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