Product overview
- Part Number
- 2DB1188R-13
- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT 1000W -32Vceo
Documents & Media
- Datasheets
- 2DB1188R-13
Product Attributes
- Collector- Base Voltage VCBO :
- 40 V
- Collector- Emitter Voltage VCEO Max :
- 32 V
- Collector-Emitter Saturation Voltage :
- 800 mV
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 6 V
- Gain Bandwidth Product fT :
- 120 MHz
- Maximum DC Collector Current :
- 2 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-89-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 1000 mW
- Series :
- 2DB11
- Transistor Polarity :
- PNP
Description
Bipolar Transistors - BJT 1000W -32Vceo
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
D38999/20JA35SN-LC
D38999/20JE99HN-LC
D38999/20JE99PN-LC
DTS20W17-99BN
DTS20W17-35PN-LC
DTS20W17-35AN
DTS20W17-35HN-LC
DTS26W9-35JB-LC
DTS20W19-32BN
DTS20W17-8HN-LC
DTS20W17-8PN-LC
DTS20W17-8AN
DTS20W13-35BC
DTS26W9-35BB
DTS26W9-35SB-LC
DTS20W17-26AN
D38999/20ZD35JN-LC
D38999/20ZD35SN-LC
D38999/20JB2HB
EN3645W0GN35BN