Product overview
- Part Number
- 2DB1182Q-13
- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT 32V PNP Trans -40V 10W -32V VCEO -2A
Documents & Media
- Datasheets
- 2DB1182Q-13
Product Attributes
- Collector- Base Voltage VCBO :
- - 40 V
- Collector- Emitter Voltage VCEO Max :
- - 32 V
- Collector-Emitter Saturation Voltage :
- - 0.8 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- - 5 V
- Gain Bandwidth Product fT :
- 110 MHz
- Maximum DC Collector Current :
- - 3 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- TO-252-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 10 W
- Qualification :
- AEC-Q101
- Series :
- 2DB11
- Transistor Polarity :
- PNP
Description
Bipolar Transistors - BJT 32V PNP Trans -40V 10W -32V VCEO -2A
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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