Product overview
- Part Number
- HN4C51J(TE85L,F)
- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A
Documents & Media
- Datasheets
- HN4C51J(TE85L,F)
Product Attributes
- Collector- Base Voltage VCBO :
- 120 V
- Collector- Emitter Voltage VCEO Max :
- 120 V
- Collector-Emitter Saturation Voltage :
- 0.3 V
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 100 MHz
- Maximum DC Collector Current :
- 100 mA
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-25-5
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 300 mW
- Series :
- HN4C51
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT Trans LFreq 120V NPN NPN 0.1A
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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