Product overview
- Part Number
- MBT6429DW1T1G
- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT 200mA 55V NPN
Documents & Media
- Datasheets
- MBT6429DW1T1G
Product Attributes
- Collector- Base Voltage VCBO :
- 55 V
- Collector- Emitter Voltage VCEO Max :
- 45 V
- Collector-Emitter Saturation Voltage :
- 0.6 V
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- 6 V
- Gain Bandwidth Product fT :
- 700 MHz
- Maximum DC Collector Current :
- 0.2 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SC-70-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 150 mW
- Series :
- MBT6429DW1
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT 200mA 55V NPN
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
CN0966B20G41P7Y040
TV07RW-15-35HC
TV07RW-15-35HB
CN0966A22A19S6-000
CN0966A22A19S6-040
67-06P14-63S
TV07RW-17-6HC
TV07RW-17-6HB
CN1021A22G19S8-000
CN1020A20G41P10Y040
BACC63CB20-41P10H
TV07RW-21-16HE
BACC63BV22B32S8
CN0967C22S32S8Y240
CN1020A20G41P7Y040
TV07RW-11-35JA
BACC63BP14H15S6H
CN0966A14A15S6Y040
CN0966A14A15SNY040
BACC63CB14-3S9H