Product overview
- Part Number
- NJVMJD44H11T4G
- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT SILICON Pwr TRANSISTOR
Documents & Media
- Datasheets
- NJVMJD44H11T4G
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 80 V
- Collector-Emitter Saturation Voltage :
- 1 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 85 MHz
- Maximum DC Collector Current :
- 16 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- TO-252-3
- Packaging :
- Cut Tape, Reel
- Pd - Power Dissipation :
- 20 W
- Qualification :
- AEC-Q101
- Series :
- MJD44H11
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT SILICON Pwr TRANSISTOR
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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