Product overview

Part Number
2SC5200N(S1,E,S)
Manufacturer
Toshiba
Product Category
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ

Documents & Media

Datasheets
2SC5200N(S1,E,S)

Product Attributes

Collector- Base Voltage VCBO :
230 V
Collector- Emitter Voltage VCEO Max :
230 V
Collector-Emitter Saturation Voltage :
0.4 V
Configuration :
Single
Emitter- Base Voltage VEBO :
5 V
Gain Bandwidth Product fT :
30 MHz
Maximum DC Collector Current :
15 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
Through Hole
Package / Case :
TO-3P-3
Packaging :
Tube
Pd - Power Dissipation :
150 W
Series :
2SC
Transistor Polarity :
NPN

Description

Bipolar Transistors - BJT POWER TRANSISTOR PC=150W; F=30MHZ

Price & Procurement

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