Product overview
- Part Number
- MJD45H11G
- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT 8A 80V 20W PNP
Documents & Media
- Datasheets
- MJD45H11G
Product Attributes
- Collector- Base Voltage VCBO :
- 5 V
- Collector- Emitter Voltage VCEO Max :
- 80 V
- Collector-Emitter Saturation Voltage :
- 1 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 90 MHz
- Maximum DC Collector Current :
- 8 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- TO-252-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 20 W
- Series :
- MJD45H11
- Transistor Polarity :
- PNP
Description
Bipolar Transistors - BJT 8A 80V 20W PNP
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
GS8182D09BGD-300
GS8182S09BD-300
GS8182Q08BGD-300
GS8182S08BGD-300
GS8182Q18BGD-300
GS8182D36BGD-300
GS8182D18BGD-300
GS8182S18BD-300
GS8182Q36BD-300
GS8182Q36BGD-300
GS8182S08BD-300
GS8182D09BD-300
GS8182D08BGD-300
GS8182S09BGD-300
GS8182S18BGD-300
GS8182S36BD-300
GS8182D18BD-300
GS8182Q09BGD-300
GS8182D36BD-300
GS8182Q08BD-300