Product overview

Part Number
2DD1664R-13
Manufacturer
Diodes Incorporated
Product Category
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT 1000W 32Vceo

Documents & Media

Datasheets
2DD1664R-13

Product Attributes

Collector- Base Voltage VCBO :
40 V
Collector- Emitter Voltage VCEO Max :
32 V
Collector-Emitter Saturation Voltage :
400 mV
Configuration :
Single
Emitter- Base Voltage VEBO :
6 V
Gain Bandwidth Product fT :
280 MHz
Maximum DC Collector Current :
1 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
SOT-89-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
1000 mW
Series :
2DD16
Transistor Polarity :
NPN

Description

Bipolar Transistors - BJT 1000W 32Vceo

Price & Procurement

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