Product overview

Part Number
PBSS4160PANP,115
Manufacturer
Nexperia
Product Category
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT 60V 1A NPN/PNP lo VCEsat transistor

Documents & Media

Datasheets
PBSS4160PANP,115

Product Attributes

Collector- Base Voltage VCBO :
60 V
Collector- Emitter Voltage VCEO Max :
60 V
Collector-Emitter Saturation Voltage :
90 mV, - 125 mV
Configuration :
Dual
Emitter- Base Voltage VEBO :
7 V
Gain Bandwidth Product fT :
175 MHz, 125 MHz
Maximum DC Collector Current :
1.5 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 55 C
Mounting Style :
SMD/SMT
Package / Case :
DFN2020-6
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
1450 mW
Qualification :
AEC-Q101
Transistor Polarity :
NPN, PNP

Description

Bipolar Transistors - BJT 60V 1A NPN/PNP lo VCEsat transistor

Price & Procurement

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