Product overview
- Part Number
- HN1A01FU-Y,LF
- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT US6 PLN TRANSISTOR Pd=200mW F=1MHz
Documents & Media
- Datasheets
- HN1A01FU-Y,LF
Product Attributes
- Collector- Base Voltage VCBO :
- - 50 V
- Collector- Emitter Voltage VCEO Max :
- - 50 V
- Collector-Emitter Saturation Voltage :
- - 0.1 V
- Emitter- Base Voltage VEBO :
- - 5 V
- Gain Bandwidth Product fT :
- 80 MHz
- Maximum DC Collector Current :
- - 150 mA
- Mounting Style :
- SMD/SMT
- Package / Case :
- US-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 200 mW
- Qualification :
- AEC-Q101
- Series :
- HN1A01
- Transistor Polarity :
- PNP
Description
Bipolar Transistors - BJT US6 PLN TRANSISTOR Pd=200mW F=1MHz
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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