Product overview
- Part Number
- QSZ4TR
- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT ISO TRANSISTORDIODE GEN PURP
Documents & Media
- Datasheets
- QSZ4TR
Product Attributes
- Collector- Base Voltage VCBO :
- 30 V
- Collector- Emitter Voltage VCEO Max :
- 30 V
- Configuration :
- Dual
- Gain Bandwidth Product fT :
- 280 MHz
- Maximum DC Collector Current :
- 2 A
- Maximum Operating Temperature :
- + 150 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-25-5
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 500 mW
- Series :
- QSZ4
- Transistor Polarity :
- NPN, PNP
Description
Bipolar Transistors - BJT ISO TRANSISTORDIODE GEN PURP
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
MMK10122M1000A01L4BULK
F461KG223K400L
F611JM472K1K0L
PHE426HJ5820JR05
F611KG392K1K0L
MMK5332M63J01L4BULK
MKT1818268405
ECQ-E4104KFA
R66PD1680Z310K
F611JT822J1K0A
MMK7.5184K250K03L4BULK
F611KG562M1K0L
F611KJ123M1K0A
MMK10332K1000A01L16.5TR18
MMK10273M63A01L4BULK
R76QI23905050J
B32521N6104K289
ECW-HA3C132HQ
ECW-HA3C362JQ
ECW-FD2J823K4