Product overview
- Part Number
- MJE5731G
- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT 1A 350V 40W PNP
Documents & Media
- Datasheets
- MJE5731G
Product Attributes
- Collector- Base Voltage VCBO :
- 350 V
- Collector- Emitter Voltage VCEO Max :
- 350 V
- Collector-Emitter Saturation Voltage :
- 1 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 5 V
- Gain Bandwidth Product fT :
- 10 MHz
- Maximum DC Collector Current :
- 1 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 40 W
- Series :
- MJE5731
- Transistor Polarity :
- PNP
Description
Bipolar Transistors - BJT 1A 350V 40W PNP
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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