Product overview
- Part Number
- MJD253-1G
- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT 4A 100V 12.5W PNP
Documents & Media
- Datasheets
- MJD253-1G
Product Attributes
- Collector- Base Voltage VCBO :
- 100 V
- Collector- Emitter Voltage VCEO Max :
- 100 V
- Collector-Emitter Saturation Voltage :
- 0.6 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 7 V
- Gain Bandwidth Product fT :
- 40 MHz
- Maximum DC Collector Current :
- 4 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- IPAK-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 12.5 W
- Series :
- MJD253
- Transistor Polarity :
- PNP
Description
Bipolar Transistors - BJT 4A 100V 12.5W PNP
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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