Product overview

Part Number
NSV1C301ET4G-VF01
Manufacturer
onsemi
Product Category
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V

Documents & Media

Datasheets
NSV1C301ET4G-VF01

Product Attributes

Collector- Base Voltage VCBO :
140 V
Collector- Emitter Voltage VCEO Max :
100 V
Collector-Emitter Saturation Voltage :
0.115 V
Configuration :
Single
Emitter- Base Voltage VEBO :
6 V
Gain Bandwidth Product fT :
120 MHz
Maximum DC Collector Current :
6 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
SMD/SMT
Package / Case :
DPAK-3
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
33 W
Qualification :
AEC-Q101
Transistor Polarity :
NPN

Description

Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V

Price & Procurement

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