BUL1102E - STMicroelectronics

Product overview

Part Number: BUL1102E

Manufacturer: STMicroelectronics

Product Category: Bipolar Transistors - BJT

Description: Bipolar Transistors - BJT PTD IGBT & IPM

Documents & Media

Datasheets: BUL1102E

Product Attributes

Collector- Emitter Voltage VCEO Max :: 450 V

Configuration :: Single

Emitter- Base Voltage VEBO :: 12 V

Maximum DC Collector Current :: 4 A

Maximum Operating Temperature :: + 150 C

Minimum Operating Temperature :: - 65 C

Mounting Style :: Through Hole

Package / Case :: TO-220-3

Packaging :: Tube

Pd - Power Dissipation :: 70 W

Series :: BUL1102E

Transistor Polarity :: NPN

Description

Bipolar Transistors - BJT PTD IGBT & IPM

Price & Procurement

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