Product overview
- Part Number
- BUL1102E
- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT PTD IGBT & IPM
Documents & Media
- Datasheets
- BUL1102E
Product Attributes
- Collector- Emitter Voltage VCEO Max :
- 450 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 12 V
- Maximum DC Collector Current :
- 4 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 70 W
- Series :
- BUL1102E
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT PTD IGBT & IPM
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
