Product overview

Part Number
PBSS4160DSH
Manufacturer
Nexperia
Product Category
Bipolar Transistors - BJT
Description
Bipolar Transistors - BJT 1A NPN/NPN Low VCEsat Transistor

Documents & Media

Datasheets
PBSS4160DSH

Product Attributes

Collector- Base Voltage VCBO :
80 V
Collector- Emitter Voltage VCEO Max :
60 V
Collector-Emitter Saturation Voltage :
200 mV
Configuration :
Dual
Emitter- Base Voltage VEBO :
5 V
Gain Bandwidth Product fT :
220 MHz
Maximum DC Collector Current :
2 A
Maximum Operating Temperature :
+ 150 C
Minimum Operating Temperature :
- 65 C
Mounting Style :
SMD/SMT
Package / Case :
TSOP-6
Packaging :
Cut Tape, MouseReel, Reel
Pd - Power Dissipation :
700 mW
Qualification :
AEC-Q101
Transistor Polarity :
NPN

Description

Bipolar Transistors - BJT 1A NPN/NPN Low VCEsat Transistor

Price & Procurement

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