Product overview
- Part Number
- SBC856ALT1G
- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT SS GP XSTR PNP 65V
Documents & Media
- Datasheets
- SBC856ALT1G
Product Attributes
- Collector- Base Voltage VCBO :
- - 80 V
- Collector- Emitter Voltage VCEO Max :
- - 65 V
- Collector-Emitter Saturation Voltage :
- - 0.3 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- - 5 V
- Gain Bandwidth Product fT :
- 100 MHz
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-23-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 225 mW
- Qualification :
- AEC-Q101
- Series :
- SBC856ALT1G
- Transistor Polarity :
- PNP
Description
Bipolar Transistors - BJT SS GP XSTR PNP 65V
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
MS3100E14S-2P
97B-3100A10SL-4S
MS3101F14S-2S
97-3106A-18-16P
MS3106F18-4P
97-3102A-22-19P
97-3102A-22-23S
97-3101A-20-29S
MS3476L10-6SW
97-3106A2016S
MS3475W12-8P
97-3100A-14S-6S
MS27466T11B35S
97-3102A-24-22P
H/MS3108B18-10S(31)
MS3475W14-12S
MS3108E20-29P
97-3102A2821S
97-3106A-28-21P
MS27467T21B11P