Product overview
- Part Number
- FMMT417TD
- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT NPN Avalanche
Documents & Media
- Datasheets
- FMMT417TD
Product Attributes
- Collector- Base Voltage VCBO :
- 320 V
- Collector- Emitter Voltage VCEO Max :
- 100 V
- Collector-Emitter Saturation Voltage :
- 0.5 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 6 V
- Gain Bandwidth Product fT :
- 40 MHz
- Maximum DC Collector Current :
- 0.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-23-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 330 mW
- Series :
- FMMT41
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT NPN Avalanche
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
EMRA51Y2H-1.8432M TR
EMRA43Y2H-40.000M TR
EMRA41Y2H-20.000M TR
EMRA41Y2H-75.000M TR
EMRA31Y2H-24.000M TR
EMRA33Y2H-12.288M TR
EMRA53Y2H-48.000M TR
ASCO2-20.00000MHz-LS-T3
ASCO2-8.000MHZ-LK-T3
ASCO2-80.000MHZ-LK-T3
ASCO2-12.00000MHz-LS-T3
FO7HSCDM66.0-T2
FO7HSCDM60.0-T2
EMRA11Y2H-12.288M TR
EMRA23Y2H-30.000M TR
EMRA13Y2H-49.152M TR
EMRA23Y2H-106.250M TR
EMRA23Y2H-100.000M TR
EMRA13Y2H-12.288M TR
EMRA11Y2H-27.000M TR