Product overview
- Part Number
- KSD363YTU
- Manufacturer
- onsemi / Fairchild
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT NPN Epitaxial Sil
Documents & Media
- Datasheets
- KSD363YTU
Product Attributes
- Collector- Base Voltage VCBO :
- 300 V
- Collector- Emitter Voltage VCEO Max :
- 120 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 8 V
- Gain Bandwidth Product fT :
- 10 MHz
- Maximum DC Collector Current :
- 6 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 40000 mW
- Series :
- KSD363
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT NPN Epitaxial Sil
Price & Procurement
Associated Product
-
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
You May Also Be Interested In
R1100D251C-TR-F
R1100D241C-TR-F
R1100D291C-TR-F
ADP1710AUJZ-0.8-R7
MPQ8903DJ-3.3-LF-Z
R1100D171C-TR-F
MP2004ADJ-LF-Z
R1100D321C-TR-F
R1100D331C-TR-F
ISL9008AIEFZ-T
ISL9008AIEJZ-T
R1100D281C-TR-F
ADP1710AUJZ-1.0-R7
R1100D261C-TR-F
R1100D341C-TR-F
R1100D141C-TR-F
R1100D191C-TR-F
ISL9008AIEKZ-T
ADP1710AUJZ-1.10R7
R1100D401C-TR-F