Product overview
- Part Number
- ZXTN25100DGQTA
- Manufacturer
- Diodes Incorporated
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT 100V NPN High Gain 180V 85mOhm
Documents & Media
- Datasheets
- ZXTN25100DGQTA
Product Attributes
- Collector- Base Voltage VCBO :
- 180 V
- Collector- Emitter Voltage VCEO Max :
- 100 V
- Collector-Emitter Saturation Voltage :
- 120 mV
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 7 V
- Gain Bandwidth Product fT :
- 175 MHz
- Maximum DC Collector Current :
- 3 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- SOT-223-4
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 1.2 W
- Qualification :
- AEC-Q101
- Series :
- ZXTN25100
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT 100V NPN High Gain 180V 85mOhm
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
