Product overview
- Part Number
- PBSS5112PAP,115
- Manufacturer
- Nexperia
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT 120V 1A PNP/PNP lo VCEsat transistor
Documents & Media
- Datasheets
- PBSS5112PAP,115
Product Attributes
- Collector- Base Voltage VCBO :
- - 120 V
- Collector- Emitter Voltage VCEO Max :
- - 120 V
- Collector-Emitter Saturation Voltage :
- - 150 mV
- Configuration :
- Dual
- Emitter- Base Voltage VEBO :
- - 7 V
- Gain Bandwidth Product fT :
- 100 MHz
- Maximum DC Collector Current :
- - 1.5 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Package / Case :
- DFN2020-6
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 1450 mW
- Qualification :
- AEC-Q101
- Transistor Polarity :
- PNP
Description
Bipolar Transistors - BJT 120V 1A PNP/PNP lo VCEsat transistor
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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