Product overview
- Part Number
- 2SA1162-O,LF
- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT Bias Resistor Built-in transistor
Documents & Media
- Datasheets
- 2SA1162-O,LF
Product Attributes
- Collector- Base Voltage VCBO :
- - 50 V
- Collector- Emitter Voltage VCEO Max :
- - 50 V
- Collector-Emitter Saturation Voltage :
- - 0.3 V
- Emitter- Base Voltage VEBO :
- - 5 V
- Gain Bandwidth Product fT :
- 80 MHz
- Maximum DC Collector Current :
- - 150 mA
- Mounting Style :
- SMD/SMT
- Package / Case :
- TO-236MOD-3
- Packaging :
- Cut Tape, MouseReel, Reel
- Pd - Power Dissipation :
- 150 mW
- Qualification :
- AEC-Q101
- Series :
- 2SA1162
- Transistor Polarity :
- PNP
Description
Bipolar Transistors - BJT Bias Resistor Built-in transistor
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
2227669-8
UE78-A2114-0D51T
UE78-A2110-0D52T
UE78-A2110-0D51T
UE78-A2110-0D61T
UE78-A2114-0D61T
UE78A21140D52T
UE78-A2110-0D62T
UE78-A2114-0D62T
10158631-101LF
SSATA001021921
UE78A41140D21H
UE78A41140032H
UE78A41100D31H
UE78A41140022H
2170190-1
UE78A41100022H
UE78A41100D21H
UE78A41140D31H
UE78A41100032H