Product overview
- Part Number
- MJE18008G
- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Description
- Bipolar Transistors - BJT 8A 450V 125W NPN
Documents & Media
- Datasheets
- MJE18008G
Product Attributes
- Collector- Base Voltage VCBO :
- 1 kV
- Collector- Emitter Voltage VCEO Max :
- 450 V
- Collector-Emitter Saturation Voltage :
- 0.3 V
- Configuration :
- Single
- Emitter- Base Voltage VEBO :
- 9 V
- Gain Bandwidth Product fT :
- 13 MHz
- Maximum DC Collector Current :
- 8 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 65 C
- Mounting Style :
- Through Hole
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Pd - Power Dissipation :
- 125 W
- Series :
- MJE18008
- Transistor Polarity :
- NPN
Description
Bipolar Transistors - BJT 8A 450V 125W NPN
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
RS73F2BTTD38R3C
RS73F2BTTD2803C
RS73G2BTTD6192B
RS73F2BTTD3092B
RS73G2BTTD90R9C
RS73G2BTTD2000B
RS73F2BTTD57R6C
RS73G2BTTD3920B
RS73G2BTTD1151B
RS73F2BTTD6343C
RS73G2BTTD5760B
RS73G2BTTD2052B
RS73F2BTTD3901B
RS73F2BTTD13R0B
RS73G2BTTD1101C
RS73F2BTTD43R0B
RS73G2BTTD5602C
RS73G2BTTD3900B
RS73G2BTTD6341C
RS73F2BTTD5603C