Product overview
- Part Number
- A2G22S190-01SR3
- Manufacturer
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Description
- RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
Documents & Media
- Datasheets
- A2G22S190-01SR3
Product Attributes
- Gain :
- 16.5 dB
- Id - Continuous Drain Current :
- 19 mA
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 55 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 1800 MHz to 2200 MHz
- Package / Case :
- NI-400S-2
- Packaging :
- Reel
- Technology :
- GaN-on-Si
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 150 V
Description
RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 36 W Avg., 48 V
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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