Product overview
- Part Number
- A2V09H525-04NR6
- Manufacturer
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Description
- RF MOSFET Transistors Airfast RF LDMOS Wideband Integrated power amplifier, 575-960 MHz, 525 W, 48 V
Documents & Media
- Datasheets
- A2V09H525-04NR6
Product Attributes
- Gain :
- 18.9 dB
- Id - Continuous Drain Current :
- 2.8 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 720 MHz to 960 MHz
- Output Power :
- 120 W
- Package / Case :
- OM-1230-4
- Packaging :
- Reel
- Technology :
- SI
- Transistor Polarity :
- Dual N-Channel
- Vds - Drain-Source Breakdown Voltage :
- - 500 mV, 105 V
Description
RF MOSFET Transistors Airfast RF LDMOS Wideband Integrated power amplifier, 575-960 MHz, 525 W, 48 V
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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