Product overview
- Part Number
- RF2L42008CG2
- Manufacturer
- STMicroelectronics
- Product Category
- RF MOSFET Transistors
- Description
- RF MOSFET Transistors 8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor
Documents & Media
- Datasheets
- RF2L42008CG2
Product Attributes
- Gain :
- 14.5 dB
- Maximum Operating Temperature :
- + 200 C
- Mounting Style :
- SMD/SMT
- Operating Frequency :
- 3.6 GHz
- Output Power :
- 8 W
- Package / Case :
- E2-3
- Packaging :
- Reel
- Rds On - Drain-Source Resistance :
- 1.5 Ohms
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 65 V
Description
RF MOSFET Transistors 8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor
Price & Procurement
Associated Product
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Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
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