Product overview
- Part Number
- MRFX600HR5
- Manufacturer
- NXP Semiconductors
- Product Category
- RF MOSFET Transistors
- Description
- RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
Documents & Media
- Datasheets
- MRFX600HR5
Product Attributes
- Gain :
- 26.4 dB
- Id - Continuous Drain Current :
- 32 A
- Maximum Operating Temperature :
- + 150 C
- Minimum Operating Temperature :
- - 40 C
- Mounting Style :
- Screw Mount
- Operating Frequency :
- 1.8 MHz to 400 MHz
- Output Power :
- 600 W
- Package / Case :
- NI-780H-4L
- Packaging :
- Cut Tape, Reel
- Technology :
- SI
- Transistor Polarity :
- N-Channel
- Vds - Drain-Source Breakdown Voltage :
- 193 V
Description
RF MOSFET Transistors Wideband RF Power LDMOS Transistor, 600 W CW over 1.8-400 MHz, 65 V
Price & Procurement
Associated Product
-
-
-
-
-
-
-
Amphenol FCIAutomotive Connectors Minitek MicroSpaceXS,1.27mm Crimp-to-Wire Connector Platform, Wire to Board Header, 3 Position., STG, Top Latch, Gold, WaterProof
-
-
-
You May Also Be Interested In
RC2512FK-0716K2L
SG73S2ETTD3R00F
SG73S2ETTD1653F
RK73H3ATTE2053F
RK73G2BTTD1151C
RK73H3ATTE1623F
SG73S2ETTD2261F
SG73P2BTTD8201D
RC2512FK-0732R4L
SG73P2ETTD47R5F
SG732ETTD392K
SG73P2ETTD95R3F
WK73R2B15TTD1741D
SG73S2ETTD12R4F
SG73P2ETTD4R7G
RK73H3ATTE11R0F
SG73P2ETTD4021F
WK73R2B15TTD4641D
RK73H3ATTE2051F
RK73H3ATTE1433F